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parameter max. units v ds drain- source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.0 i d @ t a = 70c continuous drain current, v gs @ -10v -2.4 a i dm pulsed drain current -24 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.80 linear derating factor 10 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 04/30/03 parameter max. units r ja maximum junction-to-ambient 100 c/w thermal resistance
www.irf.com 1 irlml5203 hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 tm , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. description ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge pd - 93967a v dss r ds(on) max (m i d -30v 98@v gs = -10v -3.0a 165@v gs = -4.5v -2.6a s g 1 2 d 3 micro3 tm provisional
2 www.irf.com provisional parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time ??? 17 26 ns t j = 25c, i f = -1.3a q rr reverse recovery charge ??? 12 18 nc di/dt = -100a/s source-drain ratings and characteristics 24 1.3 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on fr-4 board, t
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.019 ??? v/c reference to 25c, i d = -1ma ??? ??? 98 v gs = -10v, i d = -3.0a ??? ??? 165 v gs = -4.5v, i d = -2.6a v gs(th) gate threshold voltage -1.0 ??? -2.5 v v ds = v gs , i d = -250a g fs forward transconductance 3.1 ??? ??? s v ds = -10v, i d = -3.0a ??? ??? -1.0 v ds = -24v, v gs = 0v ??? ??? -5.0 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 9.5 14 i d = -3.0a q gs gate-to-source charge ??? 2.3 3.5 nc v ds = -24v q gd gate-to-drain ("miller") charge ??? 1.6 2.4 v gs = -10v t d(on) turn-on delay time ??? 12 ??? v dd = -15v t r rise time ??? 18 ??? i d = -1.0a t d(off) turn-off delay time ??? 88 ??? r g = 6.0 ? t f fall time ??? 52 ??? v gs = -10v c iss input capacitance ??? 510 ??? v gs = 0v c oss output capacitance ??? 71 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 43 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current

www.irf.com 3 provisional fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v 3.0a 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -7.0v -5.5v -4.5v -4.0v -3.5v -2.7v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -2.70v 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 7.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
4 www.irf.com provisional fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.0a v = -15v ds v = -24v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 200 400 600 800 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 provisional fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
6 www.irf.com provisional fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 4 8 12 16 -i d , drain current (a) 0.00 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -10v v gs = -4.5v 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -v gs, gate -to -source voltage (v) 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -3.0a
www.irf.com 7 provisional fig 14. threshold voltage vs. temperature typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 10 20 30 p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a
8 www.irf.com provisional
micro3 tm package outline lead assignments 1 - gate 2 - source 3 - drain l 3x 3x c a1 - c - b 3x a e e1 0.008 (.003) 3 1 2 e - a - - b - d h 0.20 ( .008 ) m a m dim inches millimeters min max min max a .032 .044 0.82 1.11 a1 .001 .004 0.02 0.10 b .015 .021 0.38 0.54 c .004 .006 0.10 0.15 d .105 .120 2.67 3.05 e .0750 basic 1.90 basic e1 .0375 basic 0.95 basic e .047 .055 1.20 1.40 h .083 .098 2.10 2.50 l .005 .010 0.13 0.25 0 8 0 8 0.10 (.004) m c a s b s minimum recommended footprint 0.80 ( .031 ) 3x 2.00 ( .079 ) 0.95 ( .037 ) 2x 0.90 ( .035 ) 3x 3 3 3 notes: 1. dimensioning & tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. dimensions do not include mold flash.
www.irf.com 9 provisional
6 1996 26 24 25 30 28 we e k 27 wor k 29 2002 2003 1995 1994 2001 year b d e c y a 2000 1997 1999 1998 0 8 9 7 d c w b a x z y 04 we e k wor k 02 01 03 2002 2003 1995 1994 year 2001 2 4 5 3 y 1 w d c b a example: t his is an irlml6302 dat e code e xample s : yww = 9532 = ef yww = 9503 = 5c ww = (1-26) if preceded by las t digit of calendar year notes : t his part markin g information applies to devices produced before 02/26/2001 f 1996 52 51 50 2000 1997 1999 1998 k h j g x z y part number part number code reference: ww = (27-52) if preceded by a lett er dat e 1c = irlml6302 1d = irlml5103 1f = irlml6401 1g = irlml2502 1h = irlml5203 1e = irlml6402 1a = irlml2402 1b = irlml2803 code micro3 tm 29 30 50 w year a 2001 a b 2002 b c 2003 c d 1994 d x j 1995 1996 1997 1998 1999 2000 e f g h k y 1995 1996 1997 1998 2000 9 8 7 6 5 part number y = year w = week wor k week wor k a = irlml 2402 b = irlml2803 c = irlml 6302 d = irlml 5103 part number code reference: 25 y 51 y 26 z 52 z g = irlml2502 f = irlml6401 e = irlml6402 h = irlml5203 lot code notes: this part marking information applies to devices produced after 02/26/2001 w = (1-26) if prece ded by last digit of calendar year 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 1994 4 x 1999 0 w = (27-52) if preceded by a letter week 27 28
10 www.irf.com provisional micro3 tm tape & reel information
2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/03

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